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 PD-97334 RevA
Integrated Power Hybrid IC for Appliance Motor Drive Applications
Description
IRAM136-1060A Series 10A, 600V
with Open Emitter Pins
International Rectifier's IRAM136-1060A is a 10A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator Compressor Drivers. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark 3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package (SIP05) with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation problems to heatsink.
Features
x x x x x x x x x x x Integrated gate drivers and bootstrap diodes Temperature monitor Protection shutdown pin Low VCE (on) Trench IGBT technology Undervoltage lockout for all channels Matched propagation delay for all channels 3.3V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.25~0.75kW / 85~253 Vac Isolation 2000VRMS min and CTI> 600
Absolute Maximum Ratings
VCES / VRRM V Io @ TC=25C Io @ TC=100C Ipk Fp Pd VISO TJ (IGBT & Diode & IC) TC TSTG
+
IGBT/ FW Diode Blocking Voltage Positive Bus Input Voltage RMS Phase Current (Note 1) RMS Phase Current (Note 1) Maximum Peak Phase Current (Note 2) Maximum PWM Carrier Frequency Maximum Power dissipation per IGBT @ TC =25C Isolation Voltage (1min) Maximum Operating Junction Temperature Operating Case Temperature Range Storage Temperature Range
600 450 10 5 13 20 25 2000 +150 -20 to +100 -40 to +125
V
A kHz W VRMS C
T Mounting torque Range (M3 screw) 0.8 to 1.0 Nm Note 1: Sinusoidal Modulation at V+=400V, TJ=150C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms, TC=25C, FPWM=16kHz.
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1
IRAM136-1060A
Internal Electrical Schematic - IRAM136-1060A
V+ (13)
Q1
D1
Q2
D2
Q3
D3
VRU (17) VRV (19) VRW (21)
Q4 D4 Q5 D5 Q6 D6
R1
VB1 (9) U, VS1 (10) VB2 (5) V, VS2 (6) VB3 (1) W, VS3 (2)
D7 D8 D9
C1
R2
R3
C2
C3
R4
R5
R6
23 VS1 R9 24 HO1 25 VB1 1 VCC
22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
LO2 15 Driver IC LO3 14
HIN1 (20) HIN2 (22) HIN3 (23) LIN1 (24) LIN2 (25) LIN3 (26) ITRIP (16) FLT/EN (18)
R8
2 HIN1 3 HIN2 4 HIN3 LIN1 LIN2 LIN3 6 7 5 F ITRIP EN RCIN VSS 8 9 10 11 12
COM 13
R7
VTH (27) VCC (28) VSS (29)
C4
C5
2
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IRAM136-1060A
Absolute Maximum Ratings (Continued)
Symbol PBR Peak VS1,2,3 VB1,2,3 VCC Parameter Bootstrap Resistor Peak Power (Single Pulse) High side floating supply offset voltage High side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, ITrip, FLT/EN Min --VB1,2,3 - 20 -0.3 -0.3 Max 15.0 VB1,2,3 +0.3 600 20 Lower of (VSS+15V) or VCC+0.3V Units Conditions W V V V tP=100s, TC =100C ESR series
VIN
-0.3
V
Inverter Section Electrical Characteristics @TJ= 25C
Symbol V(BR)CES V(BR)CES / T VCE(ON) ICES VFM VBDFM RBR RBR/RBR Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Min 600 ------------------Typ --0.3 1.5 1.7 5 80 1.8 1.45 1.2 22 --Max ----1.7 2.1 80 --2.35 1.8 ----5 % Units Conditions V V/C V A V V VIN=0V, IC=250A VIN=0V, IC=250A (25C - 150C) IC=5A, TJ=25C, VCC=15V IC=5A, TJ=150C, VCC=15V VIN=0V, V+=600V VIN=0V, V+=600V, TJ=150C IF=5A IF=5A, TJ=150C IF=1A TJ=25C TJ=25C
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IRAM136-1060A
Inverter Section Switching Characteristics @ TJ= 25C
Symbol
EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG
Parameter
Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge
Min
-----------------------
Typ
240 65 305 15 115 330 105 435 40 150 19
Max
400 90 490 25 ------------29
Units Conditions
IC=5A, V+=400V VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 IC=5A, V+=400V VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 IC=8A, V+=400V, VGE=15V TJ=150C, IC=5A, VP=600V
J
ns
J
ns nC
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V+= 450V, VCC=+15V to 0V TJ=25C, VP=600V, --s V+= 360V, VCC=+15V to 0V
See CT3
SCSOA
Short Circuit Safe Operating Area
5
---
See CT2
ICSC
Short Circuit Collector Current
---
50
---
A
TJ=25C, V+= 400V, VCC=15V See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol VB1,2,3 VS1,2,3 VCC VITRIP VIN HIN Definition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage ITRIP input voltage Logic input voltage LIN, HIN, FLT/EN High side PWM pulse width Min VS+12 Note 4 12 VSS VSS 1 Typ VS+15 --15 ------Max VS+20 450 20 VSS+5 VSS+5 --V V s s Units V
Deadtime External dead time between HIN and LIN 1 ----Note 3: For more details, see IR21364 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details)
4
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IRAM136-1060A
Static Electrical Characteristics Driver Function @ TJ= 25C
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) Symbol VIN,th+ VIN,thVCCUV+, VBSUV+ VCCUV-, VBSUVVCCUVH, VBSUVH IQBS IQCC ILK IIN+ IINITRIP+ ITRIPV(ITRIP) V(ITrip, HYS) Ron_FLT Definition Positive going input threshold for LIN, HIN, FLT/EN Negative going input threshold for LIN, HIN, FLT/EN VCC and VBS supply undervoltage, Positive going threshold VCC and VBS supply undervoltage, Negative going threshold VCC and VBS supply undervoltage lock-out hysteresis Quiescent VBS supply current Quiescent VCC supply current Offset Supply Leakage Current Input bias current VIN=3.3V for LIN, HIN, FLT/EN Input bias current VIN=0V for LIN, HIN, FLT/EN ITRIP bias current VT/ITRIP=3.3V ITRIP bias current VT/ITRIP=0V ITRIP threshold Voltage ITRIP Input Hysteresis Fault low on resistance Min 2.5 --10.6 10.4 -----------1 ---1 0.44 ----Typ ----11.1 10.9 1 ------100 -3.3 --0.49 0.07 50 Max --0.8 11.6 11.4 --120 4 50 195 --6 --0.54 --100 Units V V V V V A mA A A A A A V V
Dynamic Electrical Characteristics @ TJ= 25C
Driver only timing unless otherwise specified. Symbol TON TOFF TFILIN TEN TFLT TBLT-ITRIP TITRIP DT MT TFLT-CLR Parameter Input to Output propagation turnon delay time (see fig.11) Input to Output propagation turnoff delay time (see fig. 11) Input filter time (HIN,LIN,FLT/EN) EN to output propagation delay ITRIP to Fault propagation delay ITRIP Blanking Time ITRIP to six switch turn-off propagation delay (see fig. 2) Dead Time Matching Propagation Delay Time (On & Off) all channels FAULT clear time (see fig. 2) Min ----100 300 400 100 --220 ----Typ ----200 450 600 150 --290 40 1.7 Max 1.15 1.15 --600 800 --1.75 360 75 --Units Conditions s IC=5A, V+=300V s ns ns ns ns s ns ns ms VIN=0 or VIN=5V VIN=0 or VIN=5V, VEN=0 VIN=0 or VIN=5V, VITRIP=5V VIN=0 or VIN=5V, VITRIP=5V IC=5A, V+=300V VIN=0 or VIN=5V External dead time> 400ns TC = 25C
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5
IRAM136-1060A
Thermal and Mechanical Characteristics
Symbol Rth(J-C) Rth(J-C) Rth(C-S) CD CTI Parameter Thermal resistance, per IGBT Thermal resistance, per Diode Thermal resistance, C-S Creepage Distance, from pins to backside of module Comparative Tracking Index Min ------3.2 600 Typ 4.6 6.9 0.1 ----Max 5.0 7.6 ------Units Conditions Inverter Operating Condition Flat, greased surface. Heatsink C/W compound thermal conductivity 1W/mK mm V See outline Drawings
Internal NTC - Thermistor Characteristics
Parameter R25 R125 B Definition Resistance Resistance B-constant (25-50C) Min 97 2.25 4165 -40 --Typ 100 2.52 4250 --1 Max 103 2.80 4335 125 --Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range Typ. Dissipation constant
Input-Output Logic Level Table
FLT/EN 1 1 1 1 1 0
ITRIP 0 0 0 0 1 X
HIN1,2,3 1 0 0 1 X X
LIN1,2,3 0 1 0 1 X X
U,V,W V+ 0 Off Off Off Off
6
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IRAM136-1060A
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
T ITRIP
Figure 2. ITRIP Timing Waveform
T FLT-CLR
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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IRAM136-1060A
Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Name VB3 W,VS3 na na VB2 V,VS2 na na VB1 U,VS1 na na V
+
Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage none none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none none High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage none none Positive Bus Input Voltage none none Current Protection Pin Low Side Emitter Connection - Phase 1 Fault Output and Enable Pin Low Side Emitter Connection - Phase 2 Logic Input High Side Gate Driver - Phase 1 Low Side Emitter Connection - Phase 3 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 Temperature Feedback +15V Main Supply Negative Main Supply
na na ITRIP VRU FLT/EN VRV HIN1 VRW HIN2 HIN3 LIN1 LIN2 LIN3 VTH VCC VSS
8
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IRAM136-1060A
Typical Application Connection IRAM136-1060A
1
VB3 (1) W, VS3 (2)
W
3-Phase AC MOTOR CURRENT SENSING CAN USE A SINGLE SENSE RESISTOR OR PHASE LEG SENSING AS SHOWN
BOOT-STRAP CAPACITORS
V
VB2 (5) V, VS2 (6)
IRAM136-1060A
VB1 (9) U, VS1 (10) U V+ V+ (13)
DC BUS CAPACITORS PHASE LEG CURRENT SENSE
ITRIP (16) VRU (17) FLT/EN (18) VRV (19) HIN1 (20) VRW (21) HIN2 (22) HIN3 (23)
CONTROLLER
LIN1 (24) LIN2 (25) LIN3 (26) VTH (27) VDD (28) 5V 15 V VSS (29)
29
Enable
100nF 10m 0.1m
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation.
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9
IRAM136-1060A
12 Maximum Output Phase RMS Current - A 11 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz TC = 80C TC = 90C TC = 100C
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150C, MI=0.8, PF=0.6, fmod=100Hz
6 Maximum Output Phase RMS Current - A 5 4 3 2 1 0 1 10 Modulation Frequency - Hz 100 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=400V, TJ=150C, TC=100C, MI=0.8, PF=0.6
10
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IRAM136-1060A
100 80 Total Power Loss- W
60
40
20
0 0 2 4 6 8 10 12 14 16 PWM Sw itching Frequency - kHz
IOUT = 6A IOUT = 5A IOUT = 4A 18 20
Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150C, MI=0.8, PF=0.6, fmod=100Hz
120
100 Total Power Loss - W 80
60 FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz
40 20
0 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=400V, TJ=150C, MI=0.8, PF=0.6, fmod=100Hz
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IRAM136-1060A
160 Max Allowable Case Temperature - C 140 120
100 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz
80 60
40 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=400V, TJ=150C, MI=0.8, PF=0.6, fmod=50Hz
160 TJ avg = 1.2 x TTherm + 23 IGBT Junction Temperature - C 150 140 130 120 110 100 106 90 65 70 75 80 85 90 95 100 105 110 115 Internal Therm istor Tem perature Equivalent Read Out - C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
12
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IRAM136-1060A
5.0 4.5 Thermistor Pin Read-Out Voltage - V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -30 -20 -10 Max Avg. Min
0
10
20 30 40 50 60 70 80 Therm istor Tem perature - C
90 100 110 120 130
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table.
11.0 Recommended Bootstrap Capacitor - F 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 5 10 PWM Frequency - kHz 15 20 4.7 F 3.3 F 2.2 F 1.5 F 6.8 F 10 F
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAM136-1060A
Figure 11. Switching Parameter Definitions
VCE
50% HIN /LIN
IC
IC
90% IC
VCE HIN /LIN
90% IC
50% VCE
HIN /LIN
50% HIN /LIN 50% VCE
10% IC
10% IC
tr TON
Figure 11a. Input to Output propagation turn-on delay time.
tf TOFF
Figure 11b. Input to Output propagation turn-off delay time.
IF VCE
HIN/LIN
Irr trr
Figure 11c. Diode Reverse Recovery.
14
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IRAM136-1060A
V+
5V
Ho
IN
U,V,W
Hin1,2,3
IC Driver Lo
IO
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
Hin1,2,3 1k VCC 5VZD IN 10k Lin1,2,3
Ho
IN
U,V,W
IC Driver Lo
IO
Io
Figure CT2. S.C.SOA Circuit
V+
Hin1,2,3 1k VCC 5VZD 10k
IC Driver
Ho
IN
U,V,W
Lin1,2,3 IN
Lo
IO
Io
Figure CT3. R.B.SOA Circuit
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15
IRAM136-1060A
Package Outline IRAM136-1060A
missing pin : 3,4,7,8,11,12,14,15
note3 note5
IRAM136-1060A P
note4 note2
note1: Unit Tolerance is +0.5mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from Font shown on Module. note5: "P" Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module.
Dimensions in mm For mounting instruction see AN-1049
16
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IRAM136-1060A
Package Outline IRAM136-1060A2
missing pin : 3,4,7,8,11,12,14,15
note3 note5
IRAM136-1060A2 P
note4 note2
note1: Unit Tolerance is +0.5mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from Font shown on Module. note5: "P" Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module.
Dimensions in mm For mounting instruction see AN-1049
Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 2008-07-16
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